Dispersion in GaN HEMTs: Origin, Characterization and Modeling......

GaN HEMTs are the devices of choice for high-performance microwave power applications in telecommunication and radar. Unfortunately, they are also known to show dispersive behavior, or memory effects: RF performance differs from what one would expect from DC parameters, and device performance depends much more on operation conditions than known from other technologies. This talk will introduce to the topic, starting with an introduction of what physical effects we are dealing with, and moving forward to a discussion of established characterization methods and modeling approaches.